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Continuing the Nanoelectrical Revolution

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Tracy Krainer Posted: Thu, Apr 4 2013 3:47 PM

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Innovation with Integrity

Continuing the Nanoelectrical Revolution

April 2013

Bruker has a history of innovation and leadership in the area of semiconductor electrical characterization with industry-leading SSRM, SCM, CAFM, and TUNA application modules forDimension® and MultiMode® and AFM platforms.These techniques have been improved and further augmented by Bruker's proprietary PeakForce Tapping™ based techniques, includingPeakForce TUNA™ and PeakForce KPFM™. The Dimension Icon SSRM-HR is designed specifically to address doping density and carrier profiling for the most advanced semiconductor devices. As confirmed by early adopter semiconductor manufacturers, buried gate oxide layers as thin as 5Å are detected routinely.

Topography (left) and SSRM channel (right) of ZnO sample (1.8μm scan size; sample courtesy of Prof. A. Waag, TU Braunschweig).

SSRM in Semiconductor Device Characterization
Scanning spreading resistance microscopy (SSRM) measures the local spreading resistance in a sample by probing it in contact mode atomic force microscopy while applying a DC bias and measuring resistance with a logarithmic amplifier. To reduce the serial contribution of the contact resistance in a single-probe measurement, a relatively high tip-sample force is employed. In the case of a silicon sample, this leads the tip to not only break through the oxide but also possibly to transform silicon at the contact point into a metallic phase. The spreading resistance image contrast obtained in this manner reflects variations in carrier density at the surface, with lower spreading resistance corresponding to higher carrier density. SSRM thus provides a means for 2D carrier profiling in semiconductors. It is useful across many semiconductor applications, including those utilizing compound semiconductors as well as silicon-based devices. By using a logarithmic amplifier, SSRM can cover the entire range of dopant densities (~1016 – 1020 cm-1) within a single image without parameter readjustments. Due to these capabilities, SSRM is used often in semiconductor research and development as well as failure analysis.

First and Only
Dimension Icon SSRM-HR is the ONLY solution that achieves the required spatial resolution, as seen in its ability to resolve the electrical signature of cross-sectioned 0.5A thick gate oxide. In addition, it is the ONLY solution achieving the required repeatability as seen in the 10% line repeatability in SSRM Imaging. As such, it is the ideal base platform for current and future semiconductor characterization needs. Retaining Dimension Icon's leading performance and productivity, the configuration also is upgradeable to all Icon application modules and accessories for broad R&D use.

Highest Performance SSRM Solution

Highest spatial resolution

Most repeatable carrier density mapping

Most accurate device imaging

Key Applications

Semiconductor characterization, in particular SSRM 2D carrier profiling

Failure analysis, locating dopant density or gate oxide faults in failed devices

Semiconductor device R&D

Find out more about Dimension Icon SSRM-HR by visiting our website or contact us today atproductinfo@bruker-axs.com. Click here to download brochure

Filed under: MultiMode 8 Atomic Force Microscope, Semiconductor, nanoelectrical, SSRM, Dimension, bruker
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Continuing the Nanoelectrical Revolution

rated by 0 users This post has 0 Replies | 1 Follower

rated by 0 users
This post has 0 Replies | 1 Follower