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I would like to know how to properly format a bitmap, then import into nanoman (specifically v730r1sr3 and NS5 controller on D3100) and have it create an oxidation level that would correspond to a height image following the bitmap when complete. I would need to know what type of sample is suitable, and any sample prep necessary as well.
thanks.
John,
The process for the bitmap import is well documented in 013-413-000 NANOMAN VS NANOLITHOGRAPHY V7-D, page 38. A full example experiment for Anodic Oxidation using a bitmap is on page 48. Please review and let me know if you still have a problem.
For the sample, the experiment guide recommends a “clean, doped Si surface”. If you have one of these great, otherwise you can use the frame of a SPM-probe wafer, or even the backside of an individual silicon probe die. Be sure to ground with a clip or silver paste.
If you want to get fancy, you can H-passivate the silicon surface by dipping into buffered oxide etch (BOE) or a dilute HF (6:1 to 50:1, water:HF) immediately prior to oxidation. This strips off the native oxide and will let you get higher resolution and faster oxidations at lower voltages.
You also need some humidity. If it is very dry where you do this experiment, increase your voltages and write times.
Good luck,Steve
We found that having a native oxide actually resulted in better results than the H-passivation, but it might have to do with the humidity here in Santa Barbara. Humidity, applied bias, tip velocity and surface treatment definitely all play a role in how much oxide you end up getting.
--Bede
I would like to add that proper safety procedures should be observed when using HF! Make sure you know the phone number of your closed poison emergency center before you start using HF.
That being said, the backside of e.g. an FESP cantilever works just fine for anodic oxidation and you probably do not need any etching prep. The actual writing mechanism is electrochemical iirc that is why some humidity is actually needed.
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