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I suppose you have tried on the sample chuck (D3100 stage) to see whether the measured potential follows the change in Bias. This is a quick way to verisfy whether the system is set up properly. Once you have done this, you can move on to your sample. For surface potential measurement, a reliable electrical...
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Hi Saumil, That chip carrier that you pointed out allows you to bias the tip. With the regular carrier the tip is always grounded. In order to apply a bias (which the software always allows) you have to route the bias voltage to the sample. So if you can live with biasing the sample you don't need...
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Dave, You can see surface potential variation arising from the different doping levels on the SCM sample (SRAM), but it is not an ideal sample to check/calibrate KPFM. The problem with semiconductor samples in general is that some surface states can inevitably appear in the bandgap which can mask the...
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This Support Note describes a procedure to take electric force and surface potential measurements simultaneously with topography scanning - the so called single pass technique .
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What is the difference between elechrochemical AFM and electric field AFM and surface potential AFM in terms of equipment (cantilevers, operating modes etc.)
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could it be used also for electrical (coulombian) forces, like in KPM?
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This talk of calibration standards has brought up another question- where to get electrical reference standards for techniques such as scanning spreading resistance (SSRM) or scanning capacitance (SCM)? I'm talking about a stack of layers of known doping concentration and thicknesses of epitaxially...
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Conducting atomic force microscopy (C-AFM) is an important technique in the study nanoscale charge transport properties of materials, and is of interest in the growing field of energy-related research. Conjugated polyelectrolytes (CPEs) are a particularly interesting class of materials, as they have...